Part Number: 63S080 | Manufacturer: Philips Semiconductors Inc | NSN: 5962-01-276-4794 (5962012764794) | Item Name : microcircuit memory | CAGE Code: 18324 | FSC: 5962 Microcircuits Electronic |
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MRC | Criteria | Characteristic |
---|---|---|
CZEQ | Time Rating Per Chacteristic | 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
AFJQ | Storage Temp Range | -65.0/+150.0 DEG CELSIUS |
CZER | Memory Device Type | ROM |
ADAT | Body Width | 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM |
CQZP | Input Circuit Pattern | 6 INPUT |
CQSJ | Inclosure Material | CERAMIC |
CWSG | Terminal Surface Treatment | SOLDER |
TTQY | Terminal Type And Quantity | 16 PRINTED CIRCUIT |
CBBL | Features Provided | PROGRAMMABLE AND W/OPEN COLLECTOR AND HERMETICALLY SEALED |
ADAQ | Body Length | 0.870 INCHES MAXIMUM |
AEHX | Maximum Power Dissipation Rating | 325.0 MILLIWATTS |
ADAU | Body Height | 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM |
AFGA | Operating Temp Range | -0.0/+70.0 DEG CELSIUS |
CQSZ | Inclosure Configuration | DUAL-IN-LINE |
MRC | Decoded Requirement | Clear Text Reply |
CZEN | Voltage Rating And Type Per Characteristic | 5.0 VOLTS MAXIMUM POWER SOURCE |
CQWX | Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
Related NSN Part Numbers of 63S080 |
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63S-0030V-0010 NON-ASBESTOS | 63S-25 | 63S0108 | 63S080N |
63S081J | 63S081J | 63S081N | 63S081N |
63S081N | 63S081N | 63S081N | 63S081N |
63S103 | 63S140J | 63S141J | 63S141J |
63S141J | 63S141J | 63S141J | 63S141N |
63S1641AJ | 63S164AJ | 63S2 | 63S240J |
63S240N | 63S251T602 | 63S280N | 63S281J |
63S281N | 63S281N | 63S281N | 63S285J |
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